| 摘要 |
In the particular embodiments described in the specification, a thin-film transducer ink jet head is prepared by oxidizing one surface of a silicon wafer (10) to provide a dielectric layer (11), forming electrodes (17) on the layer by photoresist processing techniques, depositing one or more layers of PZT material to provide a thin-film piezoelectric layer (18) having a thickness in the range of 1-25 microns, forming another pattern of electrodes (24) on the surface of the PZT layer by photoresist techniques, and selectively etching the silicon substrate in the region of the electrodes to provide an ink chamber (30). Thereafter, an orifice plate is affixed to the substrate to enclose the ink chambers and provide an ink orifice for each of the chambers. An ink jet head having chambers 3.34mm long by 0.17mm wide by 0.15mm deep and orifices spaced by 0.305mm is provided. (Fig. 1f) |
