DIELECTRIC THIN FILM AND THIN FILM CAPACITOR AND MANUFACTURE OF DIELECTRIC THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a dielectric thin film composed of a prescribed compound which has a large specific dielectric constant not less than 2500 and has a film thickness not more than 2μm. SOLUTION: This dielectric thin film is composed of Pb(Mg1/3 Nb2/3 ) O3 which has a film thickness not more than 2μm and has a specific dielectric constant not less than 2500 at a room temperature. In a thin film capacitor, this thin film is sandwiched by a pair of electrodes. This thin film is manufactured by using a Pb(Mg1/3 Nb2/3 ) O3 precursor solution obtained by synthesizing them by mixing an MgNb precursor solution composed of MgNb composite alkoxide having absorption in the vicinity of 658cm<-1> in an infrared absorption spectrum and a Pb precursor solution. It is manufacture by using an MgNb precursor solution composed of MgNb sol obtained by partially hydrolyzing this MgNb composite alkoxide.