发明名称 |
Structure and method for exposing photoresist |
摘要 |
A structure for patterning a polysilicon layer includes a TiN layer located above an amorphous silicon (a-Si) layer forming a TiN/a-Si stack. The TiN/a-Si stack is located above the polysilicon layer. The TiN layer serves as an ARC to reduce overexposure of the photoresist used to pattern the polysilicon layer, while the a-Si layer prevents contamination of the layer below the polysilicon layer.
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申请公布号 |
US5626967(A) |
申请公布日期 |
1997.05.06 |
申请号 |
US19950452589 |
申请日期 |
1995.05.25 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PRAMANICK, SHEKHAR;LUNING, SCOTT;FEWKES, JONATHON |
分类号 |
G03F7/09;H01L21/027;H01L21/3213;(IPC1-7):H01L29/06 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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