| 摘要 |
PROBLEM TO BE SOLVED: To improve heat radiation from a package face of a semiconductor device to improve the breakdown resistance. SOLUTION: A metal layer 8 on a stem 3 has a surface region to contact with a liq. metal 13. A semiconductor chip 1 is covered with a resin 11. A Cu layer 12 having a wettability to the metal 13 is formed on the surface region of the layer 8, surface of the resin 11 and inner face of a metal cap 15. The metal 13 and inert gas 16 are charged in a space defined by the cap 15 and stem 3. |
