| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-purity member for treatment use in a short running time by a method wherein a high-purity Si mass is arranged on the lower part of a silicon carbide material fired body in a heating furnace, the fired body is heated in a halogen or halogenated hydrogen gas atmosphere and the high-purity Si mass is fused by heating in the state remaining as the purified fired body is being held in the furnace and is impregnated in the fired body. SOLUTION: A high-purity Si mass 11 housed in a container 19 is placed on the lower part of a heating furnace 10 and a semiconductor heat-treating furnace core tube 12 for a silicon carbide material fired body is arranged on a tabular material 18 having at least one through hole in its thickness direction over the mass 11. A carbon bar 13 with the upper end, which comes into contact with the tube 12, and the lower end which is buried in the Si mass 11 is arranged in the interior of the furnace 10 and a high-frequency coil 15 is arranged outside the furnace 10 in a state that the coil 15 can be moved up and down via a carbon heating body 14. NCl gas is introduced in the furnace 10 through the lower part 16 of the furnace 10 using N2 gas as a carrier and while a pressure in the furnace 10 is made a cyclic variation, the fired body is subjected to purification for one hour at about 1700 deg.C and the Si mass is subjected to purification for one hour at temperature lower than 1450 deg.C. Thereby, a higher-purity member for treatment use can be obtained in half of a conventional running time. |
