| 摘要 |
<p>A method of manufacturing epitaxial layers of GaN or mixed Ga(A1,In)N on single crystal substrates of GaN or Ga(A1,In)N using known methods of epitaxial growth from the liquid or vapor phase, where the substrates are plate-like single crystals of GaN or Ga(A1,In)N obtained by the crystallization of the first layer of the substrate from supersaturated nitrogen solution in gallium or GaA1In solution in the temperature range, T1, of 600-2000 °C, under high pressure of pure nitrogen or nitrogen containing gas mixture. Thereafter the method includes crystallization of a second or epitaxial layer on the substrate at a temperature T2 not higher than T1 after decreasing the gas pressure by at least of 200 bar until the second layer attains the prescribed thickness. The epitaxial layer is formed on the first layer by Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MB) and is characterized by a smooth gallium surface on a first side and rough nitrogen surface on a second side upon which the epitaxial growth is effected by the known methods.</p> |
