Halbleiterbauelement mit reduzierter Schaltinduktanz und Verfahren zu seiner Herstellung

摘要

A first composite substrate (5) including an insulating substrate, a copper pattern deposited on the upper surface thereof, and a copper layer deposited on the lower surface thereof is mounted on a metal base plate (1). A second composite substrate (9) and semiconductor chips (11, 12) are mounted on the first composite substrate (5), and wire bonding is performed. The paths of currents flowing in aluminum wires (13) and in a copper pattern region (8a) of the second composite substrate (9) are parallel to the paths of currents flowing in respective corresponding portions of the first composite substrate (5), and the former currents flow in the direction reverse to the latter currents. A semiconductor device is achieved wherein an increasing switching frequency being used in power modules does not increase a surge voltage generated in ON and OFF switching operation because of its small inductance so that semiconductor chips are not broken down.