Construction method for power devices with deep edge ring

摘要

A construction method for power devices with deep edge ring, which has the particularity of comprising the following steps: (a) the growth of a lightly doped N-type epitaxial layer (20) on a heavily doped N-type substrate (10); (b) the growth of an oxide (30) on the upper portion of the epitaxial layer (20); (c) the masked implantation of boron ions (40); (d) an oxide etching to expose regions for aluminum ion implantation; (e) the growth of a layer of preimplantation oxide; (f) the masking of the body regions with a layer of photosensitive material (50) and the implantation of aluminum ions (60); and (g) a single thermal diffusion process for forming a layer of thermal oxide (70) above the epitaxial layer (20) and for simultaneously forming at least one deep aluminum ring (90) that is adjacent to the body region doped with boron (80).