Gate,申请号GB19970003538-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Gate
摘要
申请公布号	GB9703538(D0)	申请公布日期	1997.04.09
申请号	GB19970003538	申请日期	1997.02.20
申请人	DARFEN LIMITED	发明人
分类号	E06B3/70;E06B11/02	主分类号	E06B3/70
代理机构		代理人
主权项
地址

您可能感兴趣的专利

TRILAYER JOSEPHSON JUNCTION STRUCTURE WITH SMALL AIR BRIDGE AND NO INTERLEVEL DIELECTRIC FOR SUPERCONDUCTING QUBITS

THERMOELECTRIC POWER GENERATION AND MINERAL EXTRACTION FROM BRINES

LIGHT EMITTING DIODE FOR SURFACE MOUNT TECHNOLOGY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING LIGHT EMITTING DIODE MODULE

BACKSIDE CONFIGURED SURFACE PLASMONIC STRUCTURE FOR INFRARED PHOTODETECTOR AND IMAGING FOCAL PLANE ARRAY ENHANCEMENT

ULTRA-LOW REFLECTANCE BROADBAND OMNI-DIRECTIONAL ANTI-REFLECTION COATING

FIN FIELD-EFFECT TRANSISTOR

STRAINED SEMICONDUCTOR NANOWIRE

STRESS MEMORIZATION TECHNIQUE FOR STRAIN COUPLING ENHANCEMENT IN BULK FINFET DEVICE

SELF-ALIGNED SIGE FINFET

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE WITH MULTI SPACER AND METHOD FOR FORMING THE SAME

GRAPHENE-BASED VALLEY FILTER AND METHOD FOR OPERATING THE SAME

Insulated Gate Bipolar Transistor Device Having a Fin Structure

SEMICONDUCTOR DEVICE HAVING VERTICAL SEMICONDUCTOR PILLARS

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

Method Of Forming A Stress Released Image Sensor Package Structure

DEEP TRENCH SPACING ISOLATION FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) IMAGE SENSORS

THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SUBSTRATE-TRANSFERRED, DEEP TRENCH ISOLATION SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR DEVICES FORMED FROM BULK SEMICONDUCTOR WAFERS