| 摘要 |
PROBLEM TO BE SOLVED: To enhance the precision of alignment of a fine high precision pattern and a pattern for exposure by an easy method by forming a specified antireflection film on a resist film, patternwise exposing the resist film through the antireflection film and developing the resist film. SOLUTION: A resist film 2 such as a photoresist film or an X-ray resist film is formed on a substrate 1 and an antireflection film 3 of perfluoro- polyether compds. represented by the formulae Rf -COO<-> NH<+> R1 R2 R3 and R1 R2 R3 N<+> O<-> CO-Rf -COO<-> NH<+> R1 R2 R3 resist film 2. In the formulae, Rf is perfluoro- polyether, each of R1 -R3 is H or hydrocarbon and at least one of them is >=10C hydrocarbon. The perfluoro-polyether compds. are dissolved in an alcohol-contg. mixed solvent, etc., because each of the compds. has long chain hydrocarbon in the molecular structure. |
