| 摘要 |
<p>PROBLEM TO BE SOLVED: To protect an active layer against damage due to cleavage by etching a trench deeper than the active layer in parallel with a stripe electrode, describing a scribe line in the trench in parallel with the stripe electrode, and then cleaving a substrate along the scribe line. SOLUTION: A trench 3 is etched between the rows of stripe electrodes (face orientation 011) 2 formed on the 100 crystal face of a substrate 1. A scratch 4 is made in the side part of substrate 1 by means of a scriber and the substrate 1 is cleaved at the position of scratch 4 thus obtaining a stripe laser bar 6. A scribe line 7 is then described on the bottom of trench 3 by means of a scriber. A sharp object, e.g. the edge of a cutter, is subsequently applied to the surface of laser bar 6 where the trench is not etched and the laser bar 6 is cleaved along the scribe line 7. According to the method, the active layer 5 of semiconductor laser element can be protected against damage due to cleavage.</p> |
