发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To shorten the time of precharge operation and read operation by precharging each bit line at the time of rising a power supply, storing a data and normal read operation. SOLUTION: Immediately after the rise of power supply, a bit line precharge circuit 7 is scanned through a column selector 3. Consequently, all bit lines are controlled to be precharged through a ring oscillator 9, a frequency divider 10, a 5 bit up-counter 11 and a power-on precharge detection circuit 13. Bit lines corresponding to all other columns are also precharged during an interval when a column corresponding to some address is selected by the column selector 3 to be accessed. Furthermore, all bit lines are precharged by a peripheral column selector 4 and a peripheral precharge circuit 14 when the memory is in data storing state.</p>
申请公布号 JPH0982090(A) 申请公布日期 1997.03.28
申请号 JP19950231775 申请日期 1995.09.08
申请人 SHARP CORP 发明人 INOUE TAKESHI
分类号 G11C11/41;G11C7/10;G11C7/12;G11C8/10;G11C16/04;G11C16/06;G11C17/00;(IPC1-7):G11C11/41 主分类号 G11C11/41
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