发明名称 OPTICAL SEMICONDUCTOR MEMORY DEVICE, ITS INFORMATION WIRING METHOD AND READING OUT METHOD, AND OPTICAL SEMICONDUCTOR LOGIC CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an optical semiconductor memory device which can read out and write by optical signals, has a long holding duration for memorizing information and has a large capacity, and methods for information writing and reading out, and to provide an optical semiconductor logic circuit device using the optical semiconductor memory device. SOLUTION: A device is constituted of a collector layer 14 made from a first conductive semiconductor, a base layer 16 joined with the collector layer 14 and made from a second conductive semiconductor, an emitter layer 18 made from the first conductive semiconductor and joined with the base layer 16, and a quantum dot 26 formed in this base layer 16.
申请公布号 JPH0982900(A) 申请公布日期 1997.03.28
申请号 JP19950235050 申请日期 1995.09.13
申请人 FUJITSU LTD 发明人 IMAMURA KENICHI;MUTO SHUNICHI
分类号 H01L29/06;H01L27/10;(IPC1-7):H01L27/10 主分类号 H01L29/06
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