| 摘要 |
PROBLEM TO BE SOLVED: To provide a high performance semiconductor light emitting element which can emit blue or green light using a II-VI compound semiconductor and a fabrication method thereof using metal organic CVD system. SOLUTION: In a semiconductor laser employing R-VI compound semiconductor, the n-side clad layer comprises a nondoped or lightly doped n-type ZnMgSSe layer 4 and an n-type ZnSSe layer 3 formed sequentially from an active layer 6 while the p-side clad layer comprises a nondoped or lightly doped p-type ZnMgSSe layer 8 and an p-type ZnSSe layer 9 formed sequentially from the active layer 6. The II-VI compound semiconductor layer constituting the semiconductor laser is grown by metal organic CVD system. The surface of underlying layer is irradiated with light during growth of n-type ZnSe buffer layer 2, n-type ZnSSe layer 3, p-type ZnSSe layer 9 and p-type ZnSe contact layer 10. |
