| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to detect the luminescence due caused by dielectric breakdown, leakage or other defect in the infinitesimal area of a semiconductor or an IC material with the accuracy of 1μm or less by detecting a near field light generated from an electrified semiconductor material. SOLUTION: A semiconductor material 1 is electrified, and a near field light generated from the electrified material 1 is detected. For example, the surface of a sample 1 is scanned while vibrating a probe 7 in the mode that a high-frequency vibration having small amplitude is superposed on a low-frequency vibration having an amplitude equivalent to the light wavelength in the state that the sample 1 is electrified. When the end of the probe 7 is brought into contact with the surface of the sample 1, the amplitude or frequency of the vibration of the probe 7 is varied, and hence the change of the high-frequency vibration component is detected by displacement detecting mechanism 13 to 15, and the height regulation of the Z-axis of the sample 1 is fed back. The light captured by the probe 7 is divided to be detected corresponding to the low-frequency vibration of the probe 7, and the precise distribution of the luminescence from the infinitesimal position is obtained.
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