发明名称 |
Photonic crystals using a semiconductor-based fabrication process |
摘要 |
A photonic crystal is formed on a semiconductor substrate using a semiconductor-based fabrication process by forming a number of alternating layers of material that have different dielectric constants. The layers of material are then etched to form a number of spaced-apart stacks of alternating layers of material. An interstack material is then formed between the stacks.
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申请公布号 |
US6795231(B1) |
申请公布日期 |
2004.09.21 |
申请号 |
US20030634179 |
申请日期 |
2003.08.05 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
KOSCIELNIAK WACLAW C. |
分类号 |
G02B6/122;(IPC1-7):G02F1/00 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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