发明名称 Photonic crystals using a semiconductor-based fabrication process
摘要 A photonic crystal is formed on a semiconductor substrate using a semiconductor-based fabrication process by forming a number of alternating layers of material that have different dielectric constants. The layers of material are then etched to form a number of spaced-apart stacks of alternating layers of material. An interstack material is then formed between the stacks.
申请公布号 US6795231(B1) 申请公布日期 2004.09.21
申请号 US20030634179 申请日期 2003.08.05
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 KOSCIELNIAK WACLAW C.
分类号 G02B6/122;(IPC1-7):G02F1/00 主分类号 G02B6/122
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