| 摘要 |
An electromechanical sensor device, which may be e.g. of piezoelectric, piezoresistive, or capacitive type, comprises an active wafer 12 having a metallised connection level 30, and an electric connection wafer 10 bearing electric interconnecting tracks or levels 18,20,24. The levels or tracks on the two wafers are secured together by solder balls 26 and optionally a solder bead 28. A mechanical sensing element is cut in the active wafer. The device can be used to make a pressure sensor, gyrometer or accelerometer. As shown the wafer 12 is covered by a protective cap 14. Several devices may be formed on wafers which are then diced. |
