发明名称 Method for heat-treating a semiconductor body
摘要 A method for heat-treating a semiconductor body comprising steps of: (a) disposing a susceptor on one surface of the semiconductor body, and disposing a protection plate in such a manner that the other surface of the semiconductor faces to a surface the protection plate, (b) heat-treating the semiconductor body, wherein the susceptor and the protection plate comprises at least one member selected from the group consisting of gallium nitride, aluminum nitride and boron nitride, and at least one of the susceptor and the protection plate has an absorber of infrared ray.
申请公布号 US5614447(A) 申请公布日期 1997.03.25
申请号 US19950559091 申请日期 1995.11.16
申请人 NEW JAPAN RADIO CO., LTD. 发明人 YAMAGA, SHIGEKI;KIMURA, CHIKAO
分类号 H01L21/26;C04B35/581;C30B33/00;H01L21/265;H01L21/324;H01L21/683;(IPC1-7):H01L21/324 主分类号 H01L21/26
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