Semiconductor component, e.g. DRAM, manufacturing method

摘要

The method involves arranging several conductors (13) or wiring on a substrate and forming insulating films between the conductors. Insulating films (14) of a first group are formed on the top sides of each conductor, while insulating films (15) of a second group are deposited on the conductor sides. Between the conductors are formed insulating films (16) of a third group, whose top sides are at a level not protruding over the top side of the first group films. Then contact holes are formed by selective etching of the third group films and are filled with conductive material. Pref. the contact hole formation contains a pattern of slots, intersecting at least on conductor.