| 摘要 |
(a) The gate oxide layer(3) and the contact layer(4) for buried contact part are formed on the substrate where the field oxide film(2) is formed. (b) The polysilicon layer(5) is formed in front of subsrate, and the first impurity region(6) is formed in the contact part substrate region through diffusion process with pocle. (c) The conductive electrode(7) and layer(8) is formed by photoetching using the photoresist layer(9). (d) After overetching, the photoresist is removed. (e) The second impurity layer(12) is formed, and a impurity region is formed by connecting with the first impurity region.
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