Semiconductor component, e.g. MISFET

摘要

The MISFET includes a substrate main surface which contains a semiconductor region between several grooves on the surface. Groove side walls are coated with a first insulating layer (102), e.g. silicon nitride, of one or several constituting layers. A second insulating layer (112) is deposited on a preset region of semiconductor region surface and is in contact with the first layer. The thickness of the first insulating layer section, on the top portion of the grooves, is greater than that of the second insulating layer. There may be a third insulating layer (103), embedded in each groove, with the first layer interposed.