| 摘要 |
<p>PROBLEM TO BE SOLVED: To form accurately a mark for position alignment and crystal orientation discrimination on a semiconductor substrate. SOLUTION: Two straight lines 11, 12 are mechanically formed on an ingot 10 ground cylindrically on the diameter. The ingot 10 is cut off to have a fixed thickness and then the outer periphery is bevelled to effect etching process to a semiconductor substrate 13 and polish the surface of the substrate 13 into a mirror face. Continuously, two straight lines 11, 12 on the sides are discriminated and the surface of the semiconductor substrate 13 is marked in a predetermined position by a laser marker with reference to these straight lines to form a mark 15 for the position alignment and discrimination of crystal orientation. The side of the semiconductor substrate 13 is bevelled into a mirror surface and two straight lines 11, 12 remaining on the side are ground off to round the semiconductor substrate 13 and finish polish the upper surface of the semiconductor 13 into the mirror surface. Thus, the mark for the position alignment and discrimination of crystal orientation can be accurately formed on the semiconductor substrate and the residual crystal defects can be prevented by a process of marking with the laser marker.</p> |
