MANUFACTURE OF THIN FILM SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve mass-productivity by raising the equality of impurity doping. SOLUTION: A thin film semiconductor element is manufactured by carrying a thin film semiconductor element board 1 on the ion beam application slit 3 having the long side larger than the long side of a thin film semiconductor element board and doping the silicon film of the thin film semiconductor element board with impurities by ion doping method. Ion doping is executed one or more times by selecting a favorable range where the ion current distribution is±10% or under of the ion beam application slit, and carrying the thin film semiconductor element board into the range. The thin film semiconductor element board may be carried a plurality of times while being shifted by a fixed quantity at every carriage, or may be carried a plurality of times while being rotated by a fixed quantity at every carriage.