| 发明名称 |
Method for forming film |
| 摘要 |
<p>According to a method for forming a film based on a thermal CVD method, a fluorine-containing silicon oxide film is formed on a substrate (6) by virtue of thermal reaction of mixed gas under the condition where the substrate (6) is being heated. The mixed gas including organic silane having Si-F bond, organic silane having no Si-F bond, and ozone-containing gas. <IMAGE></p> |
| 申请公布号 |
EP0761841(A1) |
申请公布日期 |
1997.03.12 |
| 申请号 |
EP19960112891 |
申请日期 |
1996.08.09 |
| 申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
MAEDA, KAZUOD.;TOKUMASU, N.;YUYAMA, YOSHIAKI |
| 分类号 |
H01L21/31;C23C16/40;H01L21/316;(IPC1-7):C23C16/40;C23C16/30;C23C16/56;H01L21/00 |
主分类号 |
H01L21/31 |
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代理人 |
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