| 摘要 |
PROBLEM TO BE SOLVED: To improve the controllability of a tunnel barrier and reduce the tunnel junction capacitance and mutual capacitance between electrodes by forming thick first and second anode oxide films on first and second electrodes respectively through anodic oxidation for the first and second electrodes and insulation film. SOLUTION: A first electrode 13 formed of first vapor-deposited film and a second electrode 14 of a second vopor-deposited film are arranged on an insulation film 12 of an Si substrate 11 in such a way as to face each other with a tunnel barrier 15 interposed. The electrodes 13 and 14 and insulation film 12 are anodized to form thick first and second anodized films 16 and 18 respectively on the surfaces of the electrodes 13 and 14. Thus, the thickness and width of the films 16 and 18 can be controlled without changing the thickness of the film 12 which is formed in advance for the tunnel barrier 15, and a single electron tunneling effect element wherein tunnel junction capacitance and mutual capacitance between electrodes are reduced can be obtained. |
