| 摘要 |
PROBLEM TO BE SOLVED: To form a dielectric thin film excellent in dielectric characteristics such as capacitance, at the time of forming a dielectric thin film having a compsn. composed of SrBi2.0-2.5 Ta1.5-2.5 O9 , by using a sputtering target large in the amt. of Bi to be blended. SOLUTION: At the time of forming a dielectric thin film having a compsn. composed of SrBi2.0-2.5 Ta1.5-2.5 O9 on a substrate, a sintered body having a compsn. of SrBix Tay Oα , where (x); 2.5 to 10 and (y); 1.4 to 2.6 is used as a target. At the time of sputtering this target, film forming conditions such as the substrate temp., the amt. of oxygen to be introduced and the annealing temp. are optimally set, by which a dielectric thin film 3 having approximately constant film thickness along ruggedness can be formed on a substrate 1. Thus, the thin film excellent in dielectric characteristics such as capacitance can be obtd. |
