发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To increase the operation temperature of a quantum effect element using Coulomb blockade by providing a plurality of layers for forming a potential in lamination structure, one layer which covers the inclination surface crossing each edge of a plurality of layers and where a carrier flows in a surface in parallel with the inclination surface, and a narrowing means for flowing the carrier only in an inclination direction. SOLUTION: A part 33 with a wider lower part and a part 35 with a wider upper part being extended toward a lower ohmic contact layer 25 which is the source of a gate electrode 31 are connected by a narrow part 37. The narrow part 37 covers the edge of a total delta doped layer along an inclination surface 17 and is arranged so that it is at 90 deg. for the direction where the edge of the delta dope layer is extended. A narrow part 37 of the gate electrode 31 is located on the inclination surface 17, thus narrowing the circulation path of carriers, thus increasing the level between sub bands of a rear barrier entrapment potential and achieving an operation at a higher temperature than before since the carrier at a base level cannot be easily excited by that amount even if temperature increases.
申请公布号 JPH0951107(A) 申请公布日期 1997.02.18
申请号 JP19950305962 申请日期 1995.11.24
申请人 TOSHIBA CORP 发明人 JIERUMII BAROOZU;DONARUDO AANON
分类号 H01L29/06;H01L21/338;H01L29/66;H01L29/778;H01L29/80;H01L29/812;(IPC1-7):H01L29/80 主分类号 H01L29/06
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