| 摘要 |
PROBLEM TO BE SOLVED: To realize reduction of thickness, high packing density, high reliability and high productivity of a semiconductor device. SOLUTION: An IC chip 8 where a bump electrode 7 is bumped to a wafer and a chip is diced to the predetermined chip size is bonded, by the flip chip bonding method, to a circuit substrate 6 where an IC connecting electrode 2 and an exernal connecting electrode 3 are formed on one surface thereof. After a single surface of the IC chip 8 is potted with a sealing resin 9, the non- electrode forming surface 8a is ground by the lapping method up to the predetermined thickness and a ball electrode 10 is formed on a plurality of external connecting electrodes 3 which are formed in the shape of matrix. The height t of the upper surface of loading portion of the IC chip 8 is set lower than the height h of the top area of the ball electrode 10. Therefore, continuity and washing of the mother board can be performed easily and reduction of thickness and cost can also be realized.
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