RESIST REMOVING METHOD AND RESIST STRIPPING SOLUTION

摘要

PROBLEM TO BE SOLVED: To attain high precision resist removal by dissolving the resist applied on a substrate with a stripping agent and cleaning the substrate with a supercritical fluid soluble in the resist and stripping solution. SOLUTION: A material A to be cleaned (semiconductor substrate) to which the resist is stuck is dipped into the stripping solution 1 of diethylene glycol monomethyl ether heated at 40 deg.C, which is filled in a stripping vessel 2 for 2-3min. In this way, the resist applied on the material A to be cleaned is dissolved. Next, the material A to be cleaned after the resist is dissolved by the stripping solution is housed in a pressure resistant rinse vessel 3 before the vessel 3 is hermetically closed. And the material A to be cleaned is cleaned for 3min while pouring the supercritical carbon dioxide 4. After the cleaning with the supercritical carbon dioxide 4 is completed, the cover 3a of the rinse vessel 3 is opened to leave the inside of the rinse vessel 3 to ordinary temp. and pressure. Then the material A to be cleaned is dried without generating stain since the supercritical carbon dioxide 4 is instantly gasified and vaporized.