SEMICONDUCTOR MANUFACTURING DEVICE AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To realize a semiconductor manufacturing device which can perform a plurality of treatments by one unit and can manufacture semiconductor elements with high quality during a film forming step. SOLUTION: A voltage is impressed between a semiconductor wafer 1 placed on the upper surface of a dielectric insulating layer 2 and an electrode plate 4 provided on the lower surface of the dielectric insulating layer 2 by a direct current power source. Then the wafer 1 is sucked and supporting on a wafer supporting face 3 of an upper surface of the dielectric insulating layer 2 caused by electrostatic attracting force generating. Plasma is generated in a plasma region 16 to perform sputtering by a treatment gas such as Ar being introduced into a treatment chamber 17 and a high frequency voltage being impressed to a counter electrode 14 by a high frequency power source 15. In the semiconductor manufacturing device being constituted of the above, the dielectric insulating layer 2 is adjusted as its voltage resistivityρbeing in a range of 10<8>Ωcm<ρ<10<13>Ωcm at the temperature where film making is practically performed.