发明名称 MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an MMIC where the high frequency performance is improved and the temperature rise of an active element is small. SOLUTION: A microwave transmission line consisting of a coplanar line, the active element, and a passive element are formed on the upper face of an insulating semiconductor substrate, and at least a part of the rear face of the semiconductor substrate 11 placed under the passive element 15 is made thin, and a metallic film layer 20 is formed on this thin rear face. A ground conductor 18 on the upper face of the semiconductor substrate 11 and the metallic film layer 20 on the rear face of the semiconductor substrate 11 are electrically connected by a metallic film (m) formed in a through hole H provided in the insulating semiconductor substrate 11.
申请公布号 JPH0936611(A) 申请公布日期 1997.02.07
申请号 JP19950180498 申请日期 1995.07.18
申请人 TOSHIBA CORP 发明人 ISHIMARU ATSUSHI;UEHASHI SUSUMU
分类号 H01L23/12;H01P1/30;H01P3/02 主分类号 H01L23/12
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