| 摘要 |
A stable action of a memory cell in low voltage operation is realized, while assuring the reliability of the memory cell fined in structure for enhancing the degree of integration. An external supply voltage (Vcc) is stepped down by a step-down transistor (Q1), and the stepped-down voltage is obtained as a potential for a bit line BIT. The external supply voltage (Vcc) is also stepped down by a step-down transistor (Q5), and the stepped-down voltage is obtained as a potential for a bit line +E,ovs BIT+EE . Furthermore, the external supply voltage (Vcc) is stepped down by a step-down transistor (Q3), and the stepped-down voltage is obtained as an internal supply voltage for a memory cell (MC). On the contrary, to gate electrodes of both access transistors A1, A2, the external supply voltage Vcc is directly applied through word drivers 1, 2, respectively.
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