Non-volatile semiconductor memory device

摘要

An object of the present invention is to achieve an improved flash memory which enables to simultaneously obtain high performance and reliability even with voltage VCC of 3.3 V or below. The device includes a memory cell 6, a VCC type transistor 7 and a VPP type transistor 8. Memory cell 6 includes a tunnel oxide film 2, a floating gate 3 and a control gate 4. A VCC type transistor 7 includes a first gate insulating film 9 and a first gate 10. A VPP type transistor 8 includes a second gate insulating film 11 and a second gate 12. An inequality, t(VCC)<t(TN)<t(VPP), is satisfied where t(TN) is the thickness of the tunnel oxide film, t(VCC) is the thickness of the first gate insulating film, and t(VPP) is the thickness of the second gate insulating film.