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发明名称
Halbleiterbauelement mit einer auf einem Substrat aufgewachsenen epitaxialen Schicht
摘要
申请公布号
DE69029341(D1)
申请公布日期
1997.01.23
申请号
DE19906029341
申请日期
1990.05.31
申请人
FUJITSU LTD., KAWASAKI, KANAGAWA, JP
发明人
1INOUE, TOSHIKAZU, YOKOHAMA-SHI, KANAGAWA 22, JP;ESHITA, TAKASHI, TOKYO 143, JP
分类号
C30B29/40;C30B29/68;H01L21/20;H01L21/205;H01L29/201;H01L29/205;H01L29/267;(IPC1-7):H01L29/205
主分类号
C30B29/40
代理机构
代理人
主权项
地址
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