Method of making In-containing III/V semiconductor devices

摘要

A semiconductor device comprising In-contg. III-V material is mfd. by: (a) placing a body of the In-contg. III-V material in a reactor chamber; and (b) flowing a gas mixt. of N2 and BCl3 into the chamber and applying microwave power to the gas to form a plasma to remove some of the semiconductor material. The N2/BCl3 ratio is such that the etch rate of the material is at least 50% larger than the etch rate when the ratio is zero, all else being equal.