| 摘要 |
PURPOSE: To provide a fine resist pattern having a film thickness larger than that obtained according to a conventional method by using an existing resist or exposing device. CONSTITUTION: A first layer resist 1 is applied onto a wafer 11, and exposed by use of a reticule 3 having a pattern 4 formed thereon as mask. A second layer resist 5 is further applied thereto, and exposed with the same reticule 3 as the mask. Thereafter, the first layer resist 1 and the second layer resist 2 are developed to form a resist pattern having a large film thickness. |
