| 摘要 |
<p>A device for epitaxially growing objects of SiC, a group III-nitride or alloys thereof by Chemical Vapour Deposition on a substrate (13) comprises a susceptor (7) having circumferential walls (8) surrounding a room (18) for receiving a substrate and means (11) for heating said circumferential susceptor walls and by that the substrate and a gas mixture fed to the substrate for the growth by feeding means (5). The heating means (11) is arranged to heat the susceptor (7) and by that the substrate (13, 13') above a temperature level from which sublimation of the material grown starts to increase considerably, and the feeding means is arranged to feed said gas mixture with such a composition and at such a rate into the susceptor that a positive growth takes place.</p> |
