发明名称 |
Method of forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means |
摘要 |
In an electronic device, an interconnect utilizes a flat substrate and a layer bonded to the substrate. The layer may have a through hole formed therein or be formed from parallel spaced layers. An aluminum or aluminum alloy film having single crystallinity is deposited within the through hole or void step created between parallel spaced layers.
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申请公布号 |
US5594280(A) |
申请公布日期 |
1997.01.14 |
申请号 |
US19930009446 |
申请日期 |
1993.01.27 |
申请人 |
ANELVA CORPORATION |
发明人 |
SEKIGUCHI, ATSUSHI;KOBAYASHI, TSUKASA;TAKAGI, SHINJI |
分类号 |
C23C16/20;C23C16/44;C23C16/452;C23C16/455;H01L21/285;H01L21/768;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
C23C16/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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