| 摘要 |
<p>Disclosed herein is a channel hot-carrier page write method including an array of stacked gate flash EEPROM memory cells operating in a very low energy programming mode permitting page writing of 1024 bits within a 20-100νS programming interval. Internal programming voltage levels are derived from on-chip circuits, such as charge pumps (272), operated from a single +Vcc source. In a preferred embodiment, a cache memory (262) buffers data transfers between a computer bus (264) and the page oriented storage array (252). In another embodiment, core doping is increased in the channel and drain regions to enhance hot carrier injection and to lower the programming drain voltage. The stacked floating gate structure is shown to exhibit a high programming efficiency in a range from 10?-6 to 10-4¿ at drain voltages below 5.2VDC. In another embodiment AC components of the programming current are minimized by precharging a common source line at the start of a programming cycle.</p> |
