| 摘要 |
PURPOSE: To produce crystallographically excellent polycrystalline semiconductors of high quality in high reproducibility by measuring the temperature at the bottom lower surface of the crucible to stop heating when the change rate of the temperature to the time exceeds a set value and allowing the polycrystal to grow form a seed crystal. CONSTITUTION: In the production of polycrystalline semiconductor, semiconductor materials are feed in a crucible in which a seed crystal of the semiconductor is placed on its bottom in an atmosphere inactive to the semiconductor, the semiconductor materials are melted with heat in the crucible, the lower surface temperature T1 of the crucible bottom is kept lower than the melting point of the semiconductor material while the heat is removed from the bottom of the crucible, then the crucible is cooled down to solidify the molten material. As the crucible is heated to raise its temperature, the temperature is measured at the lower surface of the crucible T1 . If the change rate of the temperature per timeΔT exceeds a prescribed value, the heating is stopped and only semiconductor materials are melted without fusion of the seed crystal. Then, polycrystals are grown by solidifying the molten materials and allowing the polycrystals to grow from the seed crystals whereby the objective polycrystals is produced.
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