Mask for transferring a pattern for use in a semiconductor device and method for manufacturing the same.

摘要

A mask for transferring a pattern in which durability can be improved and a very fine circuit pattern of a light-shielding film can be formed, and a manufacturing method thereof are obtained. In the mask for transferring a pattern, a silicon monocrystalline film (2), an aluminum monocrystalline film (3) and an aluminum oxide film (4) are formed on a mask substrate (1) so as to have a prescribed pattern feature. Silicon monocrystalline film (2) and aluminum monocrystalline film (3) serve as the light-shielding film. Aluminum oxide film (4) serves as an anti reflection and protection film.