MOS transistor fabrication method for high performance semiconductor device

摘要

The method for fabricating a MOS transistor includes forming an oxide layer over the surface of a substrate which is then etched to generate a clean semiconductor surface. A high quality gate oxide (40) is formed by e.g. heating the silicon substrate in oxygen atmosphere for a determined time interval. A polycrystalline silicon layer (6) with conductor properties is then formed on top of the gate. A mask (8) and a resin layer cover the polycrystalline silicon. A photolithography process is applied to the resin surface in order to obtain a surface pattern which include active (12) and field (10) regions. An insulating layer of silicon oxide is formed on the structure surface while a photolithography process defines buried n and p regions generated by ion implantation.