| 摘要 |
PCT No. PCT/JP92/00347 Sec. 371 Date Sep. 20, 1993 Sec. 102(e) Date Sep. 20, 1993 PCT Filed Mar. 21, 1993 PCT Pub. No. WO92/16971 PCT Pub. Date Oct. 1, 1992A semiconductor device by which a circuit having the same functions as those of the conventional circuit is realized with a very small number of elements, and complex logical functions can be designed simply, and further, its layout is also possible. A semiconductor device made up of at least one neuron MOS transistor having a gate electrode provided in a potentially floating state in a portion for isolating a source and drain region via a first insulation film, and plural control electrodes which are capacitively coupled to the floating gate electrode via a second insulation film, is characterized in that the first signal is inputted to a first control gate electrode of the first neuron MOS transistor, the first signal is inputted to a first inverter comprising one or more stages, and the output of the first inverter is inputted to a second control gate electrode which is one of the plural control gate electrodes other than the first control gate electrode.
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