发明名称 |
METHOD AND APPARATUS FOR FINELY PROCESSING TEFLON |
摘要 |
PURPOSE: To finely process Teflon having high aspect ratio and easily processing with a large area by heating the surface of the Teflon of an object to be processed, and applying ultraviolet radiation having a specific wavelength to the surface of the object to be processed via a mask. CONSTITUTION: Radiated light 2 including ultraviolet radiation having a wavelength of 160nm is emitted from the electron locus 1 stored in a synchrotron along an optical axis 5. An object 4 to be processed is disposed at the position of a distance L from a light source along the axis 5. A mask 3 is disposed at a gap G forward of the object 4 to be processed. An area for substantially transmitting the light and an area for not transmitting it are formed on the surface of the mask 3. The light 2 is directed to the object to be processed via the mask 3. An ablation of the light 2 occurs on the surface of the object 4 to be processed, and the part emitted with the light 2 is released. A fine pattern is formed on the mask 3 to finely process the object 4 to be processed. |
申请公布号 |
JPH08336894(A) |
申请公布日期 |
1996.12.24 |
申请号 |
JP19950146127 |
申请日期 |
1995.06.13 |
申请人 |
SUMITOMO HEAVY IND LTD |
发明人 |
KATO TAKANORI;CHIYOU ENHEI |
分类号 |
C08J7/00;B29C59/16;B29K27/12;B81C99/00;C08L27/12;C08L57/00;(IPC1-7):B29C59/16 |
主分类号 |
C08J7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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