发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: To form a good fine wiring pattern by avoiding a trouble on machining while functioning as a reflection prevention film. CONSTITUTION: A lamination film of an SiO2 film 23 and an Si3 N4 film 24 is used as a reflection prevention film on a WSi2 film 22. Thereby, adhesion is improved and a reflection prevention film in a heat treatment process can be prevented from peeling. In the process, a film thickness should be chosen to minimize reflectance as a reflection prevention film. As for 365 manometers of i beam wavelength which is usually used as a light source of resist exposure, the SiO2 film of about 200Åand the Si3 N4 film of about 150Åminimize reflectance.
申请公布号 JPH08339953(A) 申请公布日期 1996.12.24
申请号 JP19950146104 申请日期 1995.06.13
申请人 SANYO ELECTRIC CO LTD 发明人 TAKAO YUKIHIRO
分类号 H01L21/3205;H01L21/027;(IPC1-7):H01L21/027;H01L21/320 主分类号 H01L21/3205
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