| 摘要 |
PURPOSE: To produce a layer compound having good crystallinity and improved electrical characteristics by using, as its precursor, a compound which is deposited on a substrate and has a fluorite structure and subjecting the precursor to heat treatment in an oxidizing atmosphere. CONSTITUTION: In this production, source materials such as BiPh3 (triphenylbismuth) used as a Bi source, Sr(DPM)2 (dipivaloyl-strontium) used as an Sr source and Ta(OCH3 )5 used as a Ta source are separately dissolved in an organic solvent such as tetrahydrofuran to obtain their respective solutions each having about 0.1mol/l concn. These solutions are mixed together in liquid volume ratios of Bi:Sr:Ta of 2:1:2 as the initial values and the resultant mixed solution is transferred and introduced into a preheated vaporized. Then, the vaporized solution is introduced together with Ar carrier gas into a reactor evacuated to about 10Torr, and there, the Bi, Sr and Ta sources are deposited on a substrate heated to a about 600 deg.C. Subsequently, an oxidizing gas such as oxygen is allowed to pass through the reactor to obtain a thin film having a fluorite structure. Further, the thin film thus obtained is subjected to heat treatment in a gaseous oxygen stream under ordinary pressure, at 800 deg.C for 1hr to produce a thin film of the objective bismuth layer compound contg. Bi2 SrTa2 O9 as the main phase. |
