发明名称 Process for deposition of a Ti/TiN cap layer on aluminum metallization and apparatus
摘要 A single chamber of a vapor deposition system is used to deposit both Ti and TiN, subsequent to deposition of Al or Al alloy. Because such layers are deposited in the same chamber, the process requires fewer handling steps than the conventional process, thereby increasing throughput. Still further, only three physical vapor deposition chambers of the four of the apparatus are used, thereby allowing the fourth chamber to be used for other deposition.
申请公布号 US5582881(A) 申请公布日期 1996.12.10
申请号 US19960602200 申请日期 1996.02.16
申请人 ADVANCED MICRO DEVICES, INC. 发明人 BESSER, PAUL R.;LEE, RAYMOND;TRAN, KHANH
分类号 C23C14/06;C23C14/16;C23C14/56;(IPC1-7):H05H1/24 主分类号 C23C14/06
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