| 摘要 |
PURPOSE: To provide a method of manufacturing a thin film solar cell having sufficiently developed copper-indium-selenium three element alloy crystals in high productivity requiring of no expensive vacuum evaporation equipment, etc., at all. CONSTITUTION: A solution containing copper ions (Cu<2+> ) and selenium ions (Se<4+> ) are used to form copper-selenium layer on a conductive substrate by plating. Next, another solution containing indium ions (In<2+> ) and selenium ions (Se<4+> ) are used to form an indium-selenium layer by plating producing a precursor. Thereafter the precursor is heat-treated. |
