| 摘要 |
PURPOSE: To obtain a method useful for production of a large-sized crystal of semiconductor oxide, etc., by subjecting an object to be heated to high-frequency induction heating at a frequency to maximize electromagnetic force. CONSTITUTION: The object to be heated is subjected to the high-frequency induction heating by the frequency at which the magnitude of the skin depth P(m) expressed by the equation [δis the dielectric constant (Ωm)<-1> ,μis the relative magnetic permeability of the object to be heated, (f) is the frequency (Hz)] attains 0.3 to 2 of the radius of the object to be heated in this process for production of the crystal by the high-frequency induction heating simultaneously using the plural different frequencies. More specifically, this process is a process for production by a floating zone meting method of the high-frequency induction heating. Namely, the frequency is specified according to the dielectric constant and magnetic permeability of the object to be heated independently from the frequency for heating and melting, by which the ratio of the electromagnetic force acting on the object to be heated is increased with respect to the electric power for heating consumed in the object. The electromagnetic force is so acted as to support the melt from below in the floating zone melt method of the high-frequency induction heating, by which the growth of the large-diameter crystal is made possible.
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