| 摘要 |
PURPOSE: To provide a semiconductor device in which no insulator is deposited on the interface to silicon, for example, and the interconnection is formed of iridium in order to withstand high temperature processing. CONSTITUTION: The semiconductor device comprises a semiconductor element region and an interconnection being connected therewith, wherein the interconnection is formed of iridium. For example, an iridium layer 16 is provided on an interlayer insulation layer 12 and in an opening 14. The iridium layer 16 comprises a part serving as the lower electrode 16a of a capacitor and a part serving as an interconnection 16b coming into contact with a drain region 6. A ferroelectric layer 18 of PZT is formed on the part of the iridium layer 16 serving as the lower electrode 16a and an upper electrode, i.e., an iridium layer 20, is provided further. The iridium layer 16, 20 are formed on the entire surface by sputtering, CVD, vacuum deposition, etc., and then only the required part is left by dry etching, e.g. RIE, ion milling, ECR, etc. |
